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Semiconductor Analysis
Semiconductor TEM Imaging and Analysis
Transmission electron microscopy of advanced semiconductor devices for high-resolution imaging and characterization with high analytical efficiency.
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Advanced (scanning) transmission electron microscopy (S)TEM have become a necessary part of all leading-edge wafer-fabrication workflows due to an increasing demand for high-quality, rapid analysis and imaging of complex structures. Semiconductor designers need analytical tools that offer excellent flexibility and stability, as well as high-resolution imaging, in order to properly analyze and optimize device performance. (S)TEM characterization allows manufacturers to calibrate toolsets, diagnose failure mechanisms, and optimize overall process yields.
Beyond imaging, a range of techniques are available on (S)TEM instrumentation that are critical for semiconductor device characterization, including; electron diffraction, for crystal orientation mapping or strain analysis, energy-dispersive X-ray spectroscopy (EDS), for qualitative or quantitative composition analysis, and electron energy-loss spectroscopy (EELS), for compositional and chemical information. Additionally, advanced imaging techniques, such as electron holography, tomography, Lorentz imaging and (integrated) differential phase-contrast (iDPC/DPC) imaging, are also available and are now routinely used in semiconductor labs.
Thermo Fisher Scientific is the world leader in TEM workflows for metrology, analysis, and pathfinding in semiconductor devices thanks to an uncompromising combination of high-resolution imaging and high analytical performance. Click through to the appropriate product pages below to learn more.
TEM imaging and analysis workflow example
High-angle-annular-dark-field (HAADF) STEM image (left), annular-bright-field (ABF) STEM image (middle), and iDPC image (right) of a finFET device.
FinFET device imaged with transmission electron microscopy and mapped with energy dispersive X-ray spectroscopy.
With a diffraction series, the strain distribution in a device cross section can be detected. In this example, 1,620 diffraction patterns are collected and analyzed to generate the inset strain map, shown along the (110) direction.
High-angle-annular-dark-field (HAADF) STEM image (left), annular-bright-field (ABF) STEM image (middle), and iDPC image (right) of a finFET device.
FinFET device imaged with transmission electron microscopy and mapped with energy dispersive X-ray spectroscopy.
With a diffraction series, the strain distribution in a device cross section can be detected. In this example, 1,620 diffraction patterns are collected and analyzed to generate the inset strain map, shown along the (110) direction.
